Abdelmalek MouatsiMimiaMarir-Benabbas2021-11-182021-11-182021https://repository.univ-msila.dz/handle/123456789/27348Carbon nanotubes(CNTs)havebeenseenasapotentiallyfuturematerialtoprovidean ultrasmall device(CNTFET(CarbonNanotubeFieldEffectTransistor)).Therefore,the studiesofsub-bandseffectsareneededinordertofindtheenhancementofcarrier transport inCNTFET. Also inthispaperthebandstructureoftherolled-upnanotubecanbeobtainedby zone-foldingfromthebandstructureofthegraphenesheet.Thismethodisusedinthis work andwesimulatedandanalyzedthebandstructureofcarbonnanotube.Wepresent analytical modelingofcarrierconcentrationinazigzagsemiconductingofcarbon nanotube fieldeffecttransistor(CNFET)usingthedispersionrelation E(k) (thefirstthree sub-bands)andgiventhedensityofstates(DOS),thecarrierconcentrationisobtained based onanumericalmethodasanalternativetotheusualFermi–Dirac integrals.Inorder to findtheinfluenceofthefirstthreesub-bandsenergyanddiameter dt of CNTinnon- degenerateanddegenerateregionofthecarrierconcentrationinCNTFET.Theresults obtainedshowedthatthediameterandtheenergyofsub-bandhaveasignificantimpact on thecarrierconcentrationofCNTFETCarrier concentration Band structure Carbon nanotubediameter CNTFET Zone foldingArticle