MOHAMMED SAAD Samra. En/ Karim Bouferrache2025-07-012025-07-012025-06-18https://repository.univ-msila.dz/handle/123456789/46526The results obtained by the authors align with existing data in the current literature. The computed electronic band structure reveals that the material is a semiconductor with a direct band gap of 1.72 eV. Additionally, the material exhibits a high absorption coefficient (>104 cm−1). The static dielectric constant and static refractive index were determined to be 6 and 2.45, respectively. The investigated properties of MnCrTiZ (Z=Al, As) suggest that it could be a promising candidate for optoelectronic and photovoltaic applications These optical properties enhance its potential for solar energy conversion. This study indicated that MnCrTiZ (Z=Al, As) compounds are stable in the B1 (NaCl-type) phase under hydrostatic pressure. These compounds undergo a phase transition to the CsCl (B2) phase and a further transition from the B1 (NaCl) phase to the L10 (tetragonal) phase. The electronic properties show that these materials are half-metals in the B1 (NaCl) phase. The magnetic moment is equal to 2μBenThesis