Study of quantum well solar cells based on CuIn1-xGaxSe2 absorbers using SCAPS-1D simulator

dc.contributor.authorSALAMANI Maram safàa
dc.contributor.authorBEDDIAR Abdrrahmen
dc.contributor.authorENCA/BOUCHAMA Idris
dc.date.accessioned2025-07-10T10:02:39Z
dc.date.available2025-07-10T10:02:39Z
dc.date.issued2025-06-30
dc.description.abstractThis thesis presents a comprehensive numerical study of Cu(In₁₋ₓGaₓ)Se₂ (CIGS)-based solar cells. It begins with a detailed examination of the structure, composition, and advantages of the CIGS material for photovoltaic applications. Using the SCAPS-1D simulator, several simulations are performed to assess the influence of key physical parameters—such as gallium content, absorber thickness, acceptor concentration, and defect density—on solar cell performance. The thesis also explores the integration of quantum well (QW) structures within the CIGS absorber. Numerical modeling of CIGS/QW devices evaluates the effect of quantum well thickness, defect levels, and well depth on the photovoltaic performance. The results provide valuable insights into optimizing CIGS-based solar cells, particularly through quantum engineering approaches.
dc.identifier.otherEL/09/25
dc.identifier.urihttps://repository.univ-msila.dz/handle/123456789/46967
dc.language.isoen
dc.publisherUNIVERSITY OF M’SILA
dc.subjectSolar cell
dc.subjectCu(In
dc.subjectGa)Se2 absorber
dc.subjectQuantum well
dc.subjectSubstrate structures
dc.subjectQWSC
dc.titleStudy of quantum well solar cells based on CuIn1-xGaxSe2 absorbers using SCAPS-1D simulator
dc.typeThesis

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