Effet de confinement quantique sur la structure de bande des semiconducteurs à puits quantiques
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Date
2014
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Université Mohamed BOUDIAF de M'Sila
Abstract
The present work deals with the investigation of the quantum confinement effect on the
band structure of quantum well semiconductors, namely GaAs, InAs, InP, CdTe and ZnTe.
The calculations have been made using the effective mess method. Our results showed that
when one proceeds from bulk to nanostructed materials of interest, the electric and optical
properties change significantly suggesting thus that nanometerils may give sure diver
opportunities for obtaining new materials with new fundamental properties
Description
Keywords
Quantum confinement; Band structure; Semiconductors, Quantum wells