Effet de confinement quantique sur la structure de bande des semiconducteurs à puits quantiques

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dc.contributor.authorMESSAOUDENE, IKRAM
dc.date.accessioned2019-02-24T12:22:18Z
dc.date.available2019-02-24T12:22:18Z
dc.date.issued2014
dc.description.abstractThe present work deals with the investigation of the quantum confinement effect on the band structure of quantum well semiconductors, namely GaAs, InAs, InP, CdTe and ZnTe. The calculations have been made using the effective mess method. Our results showed that when one proceeds from bulk to nanostructed materials of interest, the electric and optical properties change significantly suggesting thus that nanometerils may give sure diver opportunities for obtaining new materials with new fundamental propertiesen_US
dc.identifier.urihttps://repository.univ-msila.dz/handle/123456789/9164
dc.language.isofren_US
dc.publisherUniversité Mohamed BOUDIAF de M'Silaen_US
dc.subjectQuantum confinement; Band structure; Semiconductors, Quantum wellsen_US
dc.titleEffet de confinement quantique sur la structure de bande des semiconducteurs à puits quantiquesen_US
dc.typeThesisen_US

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